smd type ic mosfet smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK3113 features low on-state resistance r ds(on) =4.4 max. (v gs =10v,i d =1.0a) low gate charge q g = 9 nc typ. (v dd =450v,v gs =10v,i d =2.0a) gate voltage rating 30 v avalanche capability ratings absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 600 v gate to source voltage v gss 30 v i d 2.0 a i dp * 8.0 a power dissipation t c =25 20 t a =25 1.0 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =600v,v gs =0 100 a gate leakage current i gss v gs = 30v,v ds =0 10 a gate to source cut off voltage v gs(off) v ds =10v,i d =1ma 2.5 3.5 v forward transfer admittance y fs v ds =10v,i d =1.0a 0.5 s drain to source on-state resistance r ds(on) v gs =10v,i d =1.0a 3.3 4.4 input capacitance c iss 260 pf output capacitance c oss 60 pf reverse transfer capacitance c rss 5pf turn-on delay time t on 7ns rise time t r 2ns turn-off delay time t off 22 ns fall time tf 9 ns v ds =10v,v gs =0,f=1mhz i d =1.0a,v gs(on) =10v,v dd =150v,r g =10 ,r l =10 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type transistors smd type ic smd type smd type smd type smd type ic smd type smd type smd type smd type smd type product specification
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